Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band

Jon F. Ihlefeld, Wei Tian, Zi Kui Liu, W. Alan Doolittle, Margitta Bernhagen, Peter Reiche, Reinhard Uecker, Ramamoorthy Rramesh, Darrell G. Schlom

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


BiFeO 3 thin films have been deposited on (001) SrTiO 3, (101) DyScO 3, (011) DyScO 3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002002̊). Epitaxial growth of (0001)-oriented BiFeO 3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO 3 / (100) TiO 2 buffer layers. The epitaxial BiFeO 3 thin films have 2 in-plane orientations: [112̄0] BiFeO 3 || [112̄0] GaN (SiC) plus a twin variant related by a 180̊ in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO 3, with high bandgap semiconductors is an important step toward novel field-effect devices.

Original languageEnglish (US)
Article number5183578
Pages (from-to)1528-1533
Number of pages6
JournalIEEE transactions on ultrasonics, ferroelectrics, and frequency control
Issue number8
StatePublished - Aug 2009

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering


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