Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Hanjong Paik; Zhen Chen; Edward Lochocki; H. Ariel Seidner; Amit Verma; Nicholas Tanen; Jisung Park; Masaki Uchida; Shunli Shang; Bi Cheng Zhou; Mario Brützam; Reinhard Uecker; Zi Kui Liu; Debdeep Jena; Kyle M. Shen; David A. Muller; Darrell G. Schlom

doi:10.1063/1.5001839

Adsorption-controlled growth of La-doped BaSnO₃ by molecular-beam epitaxy

Hanjong Paik, Zhen Chen, Edward Lochocki, H. Ariel Seidner, Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, Shunli Shang, Bi Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller, Darrell G. Schlom

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146 Scopus citations

Abstract

Epitaxial La-doped BaSnO₃ films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnO_x desorbs from the film surface. A film grown on a (001) DyScO₃ substrate exhibited a mobility of 183 cm² V^-1 s^-1 at room temperature and 400 cm² V^-1 s^-1 at 10 K despite the high concentration (1.2 × 10¹¹ cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)₂ Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)₂ crystallographic shear defects or point defects - significantly reduce the electron mobility.

Original language	English (US)
Article number	116107
Journal	APL Materials
Volume	5
Issue number	11
DOIs	https://doi.org/10.1063/1.5001839
State	Published - Nov 1 2017

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1063/1.5001839

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title = "Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy",

abstract = "Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.",

author = "Hanjong Paik and Zhen Chen and Edward Lochocki and {Ariel Seidner}, H. and Amit Verma and Nicholas Tanen and Jisung Park and Masaki Uchida and Shunli Shang and Zhou, {Bi Cheng} and Mario Br{\"u}tzam and Reinhard Uecker and Liu, {Zi Kui} and Debdeep Jena and Shen, {Kyle M.} and Muller, {David A.} and Schlom, {Darrell G.}",

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month = nov,

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doi = "10.1063/1.5001839",

language = "English (US)",

volume = "5",

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T1 - Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

AU - Paik, Hanjong

AU - Chen, Zhen

AU - Lochocki, Edward

AU - Ariel Seidner, H.

AU - Verma, Amit

AU - Tanen, Nicholas

AU - Park, Jisung

AU - Uchida, Masaki

AU - Shang, Shunli

AU - Zhou, Bi Cheng

AU - Brützam, Mario

AU - Uecker, Reinhard

AU - Liu, Zi Kui

AU - Jena, Debdeep

AU - Shen, Kyle M.

AU - Muller, David A.

AU - Schlom, Darrell G.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.

AB - Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.

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JF - APL Materials

IS - 11

M1 - 116107

ER -

Adsorption-controlled growth of La-doped BaSnO₃ by molecular-beam epitaxy

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