TY - GEN
T1 - Advanced Low Loss Dielectric Material Reliability and Filter Characteristics at High Frequency for mmWave Applications
AU - Kakutani, Takenori
AU - Okamoto, Daichi
AU - Guan, Zhong
AU - Suzuki, Yuya
AU - Ali, Muhammad
AU - Watanabe, Atom
AU - Kathaperumal, Mohanalingam
AU - Swaminathan, Madhavan
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/6
Y1 - 2020/6
N2 - In this paper, we report an advanced low-loss dry film build-up material applicable to high-frequency transmission, and evaluation of filter characteristics and dielectric characteristics in the mmWave band. The wireless communication standard is evolving from 5G to beyond 5G, and accordingly, it is critical to lower the loss tangent (Df) of build-up materials to enable high-speed transmission in signal paths. However, for high frequency filter applications, conventional materials such as epoxy and polyimide type build-up materials induce high insertion loss in the passband. This paper therefore introduces a lower-Df dry film build-up material (Material A) and investigates transmission characteristics of the same. To evaluate the insulation reliability and electrical performance of the material, test vehicles with precise copper patterns are designed and fabricated with a semi-additive patterning process (SAP) using the Material A. Each test board was fabricated to evaluate the insulation reliability and electrical performance of the material. By applying the Material A for SAP, over 5N/cm high peeling strength is achieved despite of the smooth surface. The material demonstrates an excellent insulation reliability between copper lines and between copper layers, specifically 300 hours of bHAST attributed to its low chlorine impurities. The dielectric property Df of the material is 0.0025 at 10 GHz. The electrical performance of lowpass filters and bandpass filters are measured by electrical analysis using microwave network analyzers system. These test boards demonstrate to achieve a low transmission loss of less than 1 dB at 28 GHz as a lowpass filter, and 1.05 dB at 28 GHz and 1.18 dB at 39 GHz as a bandpass filter. As a result of this excellent low transmission loss, this material has promising application potential for millimeter wave applications.
AB - In this paper, we report an advanced low-loss dry film build-up material applicable to high-frequency transmission, and evaluation of filter characteristics and dielectric characteristics in the mmWave band. The wireless communication standard is evolving from 5G to beyond 5G, and accordingly, it is critical to lower the loss tangent (Df) of build-up materials to enable high-speed transmission in signal paths. However, for high frequency filter applications, conventional materials such as epoxy and polyimide type build-up materials induce high insertion loss in the passband. This paper therefore introduces a lower-Df dry film build-up material (Material A) and investigates transmission characteristics of the same. To evaluate the insulation reliability and electrical performance of the material, test vehicles with precise copper patterns are designed and fabricated with a semi-additive patterning process (SAP) using the Material A. Each test board was fabricated to evaluate the insulation reliability and electrical performance of the material. By applying the Material A for SAP, over 5N/cm high peeling strength is achieved despite of the smooth surface. The material demonstrates an excellent insulation reliability between copper lines and between copper layers, specifically 300 hours of bHAST attributed to its low chlorine impurities. The dielectric property Df of the material is 0.0025 at 10 GHz. The electrical performance of lowpass filters and bandpass filters are measured by electrical analysis using microwave network analyzers system. These test boards demonstrate to achieve a low transmission loss of less than 1 dB at 28 GHz as a lowpass filter, and 1.05 dB at 28 GHz and 1.18 dB at 39 GHz as a bandpass filter. As a result of this excellent low transmission loss, this material has promising application potential for millimeter wave applications.
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U2 - 10.1109/ECTC32862.2020.00108
DO - 10.1109/ECTC32862.2020.00108
M3 - Conference contribution
AN - SCOPUS:85090294316
T3 - Proceedings - Electronic Components and Technology Conference
SP - 653
EP - 659
BT - Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 70th IEEE Electronic Components and Technology Conference, ECTC 2020
Y2 - 3 June 2020 through 30 June 2020
ER -