Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

N. Shukla; B. Grisafe; R. K. Ghosh; N. Jao; A. Aziz; J. Frougier; M. Jerry; S. Sonde; S. Rouvimov; T. Orlova; S. Gupta; S. Datta

doi:10.1109/IEDM.2016.7838542

Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

N. Shukla, B. Grisafe, R. K. Ghosh, N. Jao, A. Aziz, J. Frougier, M. Jerry, S. Sonde, S. Rouvimov, T. Orlova, S. Gupta, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

35 Scopus citations

Abstract

We demonstrate a novel Ag/HfO₂ based threshold switch (TS) with a selectivity∼10⁷, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of I_ds), and >10x Ion improvement over the conventional FET (at iso-I_off) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	34.6.1-34.6.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838542
State	Published - Jan 31 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	12/3/16 → 12/7/16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2016.7838542

Cite this

Shukla, N., Grisafe, B., Ghosh, R. K., Jao, N., Aziz, A., Frougier, J., Jerry, M., Sonde, S., Rouvimov, S., Orlova, T., Gupta, S., & Datta, S. (2017). Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 34.6.1-34.6.4). Article 7838542 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838542

Shukla, N. ; Grisafe, B. ; Ghosh, R. K. et al. / Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 34.6.1-34.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs",

abstract = "We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.",

author = "N. Shukla and B. Grisafe and Ghosh, {R. K.} and N. Jao and A. Aziz and J. Frougier and M. Jerry and S. Sonde and S. Rouvimov and T. Orlova and S. Gupta and S. Datta",

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Shukla, N, Grisafe, B, Ghosh, RK, Jao, N, Aziz, A, Frougier, J, Jerry, M, Sonde, S, Rouvimov, S, Orlova, T, Gupta, S & Datta, S 2017, Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838542, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 34.6.1-34.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838542

Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. / Shukla, N.; Grisafe, B.; Ghosh, R. K. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 34.6.1-34.6.4 7838542 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

AU - Shukla, N.

AU - Grisafe, B.

AU - Ghosh, R. K.

AU - Jao, N.

AU - Aziz, A.

AU - Frougier, J.

AU - Jerry, M.

AU - Sonde, S.

AU - Rouvimov, S.

AU - Orlova, T.

AU - Gupta, S.

AU - Datta, S.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

AB - We demonstrate a novel Ag/HfO2 based threshold switch (TS) with a selectivity∼107, a high ON-state current (Ion) of 100 μA, and ∼10pA leakage current. The thresholding characteristics of the TS result from electrically triggered spontaneous formation and rupture of an Ag filament which acts an interstitial dopant in the HfO2 insulating matrix. Further, we harness the extreme non-linearity of the TS in (1) Selectors for Phase Change Memory (PCM) based cross-point memory. We show through array level simulations of a 1024kb memory, a read margin of 28% and write margin of 32% for a leakage power of <25μW (V/3 scheme); (2) A steep-slope sub-kT/q Phase-FET, experimentally demonstrating a switching-slope (SS) of 3mV/decade (over 5 orders of Ids), and >10x Ion improvement over the conventional FET (at iso-Ioff) at T=90C (50x at T=25C); making this a promising TS for both emerging memory, and steep-slope transistor applications.

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M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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Shukla N, Grisafe B, Ghosh RK, Jao N, Aziz A, Frougier J et al. Ag/HfO₂ based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 34.6.1-34.6.4. 7838542. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838542