AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari; J. M. Redwing; G. Keiner; W. Kruppa

doi:10.1049/el:19970122

AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari, J. M. Redwing, G. Keiner, W. Kruppa

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Abstract

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An f_T of 6GHz and an f_max of 11 GHz were measured for 1 μm gate length devices.

Original language	English (US)
Pages (from-to)	242-243
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1049/el:19970122
State	Published - Jan 30 1997

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970122

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title = "AIGaN/GaN HEMTs grown on SiC substrates",

abstract = "The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.",

author = "Binari, {S. C.} and Redwing, {J. M.} and G. Keiner and W. Kruppa",

year = "1997",

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doi = "10.1049/el:19970122",

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volume = "33",

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journal = "Electronics Letters",

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TY - JOUR

T1 - AIGaN/GaN HEMTs grown on SiC substrates

AU - Binari, S. C.

AU - Redwing, J. M.

AU - Keiner, G.

AU - Kruppa, W.

PY - 1997/1/30

Y1 - 1997/1/30

N2 - The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

AB - The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

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DO - 10.1049/el:19970122

M3 - Article

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EP - 243

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

AIGaN/GaN HEMTs grown on SiC substrates

Abstract

All Science Journal Classification (ASJC) codes

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