AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari; J. M. Redwing; G. Keiner; W. Kruppa

doi:10.1049/el:19970122

AIGaN/GaN HEMTs grown on SiC substrates

S. C. Binari
, J. M. Redwing
, G. Keiner
, W. Kruppa

Research output: Contribution to journal › Article › peer-review

167 Scopus citations

Abstract

The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An f_T of 6GHz and an f_max of 11 GHz were measured for 1 μm gate length devices.

Original language	English (US)
Pages (from-to)	242-243
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1049/el:19970122
State	Published - Jan 30 1997

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970122

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@article{7e79e40fe16e4814b639d8e2db669f56,

title = "AIGaN/GaN HEMTs grown on SiC substrates",

abstract = "The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.",

author = "Binari, \{S. C.\} and Redwing, \{J. M.\} and G. Keiner and W. Kruppa",

year = "1997",

month = jan,

day = "30",

doi = "10.1049/el:19970122",

language = "English (US)",

volume = "33",

pages = "242--243",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "3",

}

TY - JOUR

T1 - AIGaN/GaN HEMTs grown on SiC substrates

AU - Binari, S. C.

AU - Redwing, J. M.

AU - Keiner, G.

AU - Kruppa, W.

PY - 1997/1/30

Y1 - 1997/1/30

N2 - The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

AB - The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70mS/mm and a gate breakdown voltage in excess of 100V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6GHz and an fmax of 11 GHz were measured for 1 μm gate length devices.

UR - https://www.scopus.com/pages/publications/0030822317

UR - https://www.scopus.com/pages/publications/0030822317#tab=citedBy

U2 - 10.1049/el:19970122

DO - 10.1049/el:19970122

M3 - Article

AN - SCOPUS:0030822317

SN - 0013-5194

VL - 33

SP - 242

EP - 243

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

AIGaN/GaN HEMTs grown on SiC substrates

Abstract

All Science Journal Classification (ASJC) codes

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