Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

Yoontae Hwang; Varistha Chobpattana; Jack Y. Zhang; James M. Lebeau; Roman Engel-Herbert; Susanne Stemmer

doi:10.1063/1.3575569

Al-doped HfO₂/In_0.53Ga_0.47 As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. Lebeau, Roman Engel-Herbert, Susanne Stemmer

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In_0.53Ga_0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO₂ dielectrics grown by sequential TMA/HTB deposition.

Original language	English (US)
Article number	142901
Journal	Applied Physics Letters
Volume	98
Issue number	14
DOIs	https://doi.org/10.1063/1.3575569
State	Published - Apr 4 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3575569

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title = "Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors",

abstract = "Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.",

author = "Yoontae Hwang and Varistha Chobpattana and Zhang, {Jack Y.} and Lebeau, {James M.} and Roman Engel-Herbert and Susanne Stemmer",

note = "Funding Information: The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). We thank Tom Mates for help with the XPS analysis. The work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.",

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doi = "10.1063/1.3575569",

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T1 - Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

AU - Hwang, Yoontae

AU - Chobpattana, Varistha

AU - Zhang, Jack Y.

AU - Lebeau, James M.

AU - Engel-Herbert, Roman

AU - Stemmer, Susanne

N1 - Funding Information: The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). We thank Tom Mates for help with the XPS analysis. The work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

PY - 2011/4/4

Y1 - 2011/4/4

N2 - Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.

AB - Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.

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Al-doped HfO₂/In_0.53Ga_0.47 As metal-oxide-semiconductor capacitors

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