Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. Lebeau, Roman Engel-Herbert, Susanne Stemmer

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26 Scopus citations


Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47 As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to ∼5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.

Original languageEnglish (US)
Article number142901
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 4 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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