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Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

  • R. Li
  • , J. Cai
  • , L. Wong
  • , Y. Chen
  • , K. L. Wang
  • , R. P. Smith
  • , S. C. Martin
  • , K. S. Boutros
  • , J. M. Redwing

Research output: Contribution to journal › Article › peer-review

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