AlGaN/GaN HEMT device physics and electrothermal modeling

Bikramjit Chatterjee, Daniel Shoemaker, Hiu Yung Wong, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

Gallium nitride (GaN) has emerged as one of the most attractive materials for radio frequency (RF) and power conversion technologies that require high-power and high-frequency devices. This is due to the superior material properties of GaN including the wide bandgap (E g =3.4eV), high saturation velocity (v s =3×107 cm/s), good electron mobility, large critical electric field (E c ~3MV/cm), and reasonable thermal conductivity (κ~150W/m-K at room temperature). The ~10× higher breakdown field than Si makes GaN devices suitable for high voltage operations while the high saturation velocity ensures its applicability for high-frequency operations, as shown in references. Among the various GaN-based devices, AlGaN/GaN high electron mobility transistors (HEMTs) are suitable for high-power applications due to their low on-resistance that stems from the two-dimensional electron gas (2DEG) formed near the AlGaN/GaN heterointerface due to the spontaneous and piezoelectric polarizations of GaN and AlGaN. In this chapter, we will explain detailed procedures to perform electrothermal modeling of AlGaN/GaN HEMTs.

Original languageEnglish (US)
Title of host publicationThermal Management of Gallium Nitride Electronics
PublisherElsevier
Pages103-163
Number of pages61
ISBN (Electronic)9780128210840
ISBN (Print)9780128211052
DOIs
StatePublished - Jan 1 2022

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Materials Science

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