TY - JOUR
T1 - AlGaN/GaN HEMT with a transparent gate electrode
AU - Pei, Yi
AU - Vampola, Kenneth J.
AU - Chen, Zhen
AU - Chu, Rongming
AU - DenBaars, Steven P.
AU - Mishra, Umesh K.
N1 - Funding Information:
Manuscript received February 19, 2009. First published April 7, 2009; current version published April 28, 2009. This work was supported by the Office of Naval Research Design-for-Reliability Initiative for Future Technologies (DRIFT) (with Dr. P. Maki and Dr. H. Dietrich as the Program Managers). The review of this letter was arranged by Editor G. Meneghesso.
PY - 2009
Y1 - 2009
N2 - AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (fT) but a much lower power gain cutoff frequency (fmax) due to the low conductivity of ITO.
AB - AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (fT) but a much lower power gain cutoff frequency (fmax) due to the low conductivity of ITO.
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U2 - 10.1109/LED.2009.2017282
DO - 10.1109/LED.2009.2017282
M3 - Article
AN - SCOPUS:67349086887
SN - 0741-3106
VL - 30
SP - 439
EP - 441
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 5
ER -