AlGaN/GaN HEMT with a transparent gate electrode

Yi Pei; Kenneth J. Vampola; Zhen Chen; Rongming Chu; Steven P. DenBaars; Umesh K. Mishra

doi:10.1109/LED.2009.2017282

AlGaN/GaN HEMT with a transparent gate electrode

Yi Pei
, Kenneth J. Vampola
, Zhen Chen
, Rongming Chu
, Steven P. DenBaars
, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (f_T) but a much lower power gain cutoff frequency (f_max) due to the low conductivity of ITO.

Original language	English (US)
Pages (from-to)	439-441
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2017282
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2017282

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@article{c1e99868b023446fa997055985a82783,

title = "AlGaN/GaN HEMT with a transparent gate electrode",

abstract = "AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (fT) but a much lower power gain cutoff frequency (fmax) due to the low conductivity of ITO.",

author = "Yi Pei and Vampola, \{Kenneth J.\} and Zhen Chen and Rongming Chu and DenBaars, \{Steven P.\} and Mishra, \{Umesh K.\}",

note = "Funding Information: Manuscript received February 19, 2009. First published April 7, 2009; current version published April 28, 2009. This work was supported by the Office of Naval Research Design-for-Reliability Initiative for Future Technologies (DRIFT) (with Dr. P. Maki and Dr. H. Dietrich as the Program Managers). The review of this letter was arranged by Editor G. Meneghesso.",

year = "2009",

doi = "10.1109/LED.2009.2017282",

language = "English (US)",

volume = "30",

pages = "439--441",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - AlGaN/GaN HEMT with a transparent gate electrode

AU - Pei, Yi

AU - Vampola, Kenneth J.

AU - Chen, Zhen

AU - Chu, Rongming

AU - DenBaars, Steven P.

AU - Mishra, Umesh K.

N1 - Funding Information: Manuscript received February 19, 2009. First published April 7, 2009; current version published April 28, 2009. This work was supported by the Office of Naval Research Design-for-Reliability Initiative for Future Technologies (DRIFT) (with Dr. P. Maki and Dr. H. Dietrich as the Program Managers). The review of this letter was arranged by Editor G. Meneghesso.

PY - 2009

Y1 - 2009

N2 - AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (fT) but a much lower power gain cutoff frequency (fmax) due to the low conductivity of ITO.

AB - AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) transparent gate electrodes have been fabricated. The transparent gate electrodes enable the investigation of photon, electron, and phonon behaviors in active regions in HEMTs using optical characterizations such as electroluminescence, photoluminescence, and Raman spectroscopy technologies. Leakage current, on/off ratio, and transparency have been compared for transistors using Ni/Au/Ni, ITO, and Ni/ITO stacks as gate electrodes. Compared to the Ni/Au/Ni gate transistor, the ITO gate device shows a comparable current gain cutoff frequency (fT) but a much lower power gain cutoff frequency (fmax) due to the low conductivity of ITO.

UR - https://www.scopus.com/pages/publications/67349086887

UR - https://www.scopus.com/pages/publications/67349086887#tab=citedBy

U2 - 10.1109/LED.2009.2017282

DO - 10.1109/LED.2009.2017282

M3 - Article

AN - SCOPUS:67349086887

SN - 0741-3106

VL - 30

SP - 439

EP - 441

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

AlGaN/GaN HEMT with a transparent gate electrode

Abstract

All Science Journal Classification (ASJC) codes

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