AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei; C. Suh; Rongming Chu; F. Recht; L. Shen; A. Corrion; C. Poblenz; J. Speck; U. K. Mishra

doi:10.1109/DRC.2007.4373683

AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Y. Pei
, C. Suh
, Rongming Chu
, F. Recht
, L. Shen
, A. Corrion
, C. Poblenz
, J. Speck
, U. K. Mishra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	65th DRC Device Research Conference
Pages	129-130
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373683
State	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country/Territory	India
City	South Bend
Period	6/18/07 → 6/20/07

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373683

Cite this

@inproceedings{64a5bc1901284434b09e33a1059125e6,

title = "AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE",

author = "Y. Pei and C. Suh and Rongming Chu and F. Recht and L. Shen and A. Corrion and C. Poblenz and J. Speck and Mishra, \{U. K.\}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/DRC.2007.4373683",

language = "English (US)",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "129--130",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

Pei, Y, Suh, C, Chu, R, Recht, F, Shen, L, Corrion, A, Poblenz, C, Speck, J & Mishra, UK 2007, AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE. in 65th DRC Device Research Conference., 4373683, 65th DRC Device Research Conference, pp. 129-130, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373683

TY - GEN

T1 - AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

AU - Pei, Y.

AU - Suh, C.

AU - Chu, Rongming

AU - Recht, F.

AU - Shen, L.

AU - Corrion, A.

AU - Poblenz, C.

AU - Speck, J.

AU - Mishra, U. K.

PY - 2007/12/1

Y1 - 2007/12/1

UR - https://www.scopus.com/pages/publications/47249127329

UR - https://www.scopus.com/pages/publications/47249127329#tab=citedBy

U2 - 10.1109/DRC.2007.4373683

DO - 10.1109/DRC.2007.4373683

M3 - Conference contribution

AN - SCOPUS:47249127329

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 129

EP - 130

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

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Cite this