All-optical control devices utilizing bulk photovoltaic effect

Michio Tanimura; Kenji Uchino; Kazuyasu Hikita

doi:10.7567/JJAPS.28S2.170

All-optical control devices utilizing bulk photovoltaic effect

Michio Tanimura, Kenji Uchino, Kazuyasu Hikita

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.

Original language	English (US)
Pages (from-to)	170-172
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	S2
DOIs	https://doi.org/10.7567/JJAPS.28S2.170
State	Published - Jan 1 1989

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.7567/JJAPS.28S2.170

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title = "All-optical control devices utilizing bulk photovoltaic effect",

abstract = "Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.",

author = "Michio Tanimura and Kenji Uchino and Kazuyasu Hikita",

year = "1989",

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doi = "10.7567/JJAPS.28S2.170",

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journal = "Japanese Journal of Applied Physics",

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T1 - All-optical control devices utilizing bulk photovoltaic effect

AU - Tanimura, Michio

AU - Uchino, Kenji

AU - Hikita, Kazuyasu

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.

AB - Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.

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DO - 10.7567/JJAPS.28S2.170

M3 - Article

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EP - 172

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - S2

ER -

All-optical control devices utilizing bulk photovoltaic effect

Abstract

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