Abstract
Some ferroelectrics such as PLZT with impurity dopants induce a high voltage under near-ultraviolet radiation. It was found that donor-type dopants situated onto the B-site of the perovskite structure enhance this photovoltaic response in PLZT ceramics. Using a donor-doped photovoltaic PLZT(3/52/48) plate with a transparent electrooptic PLZT(9/65/35) chip mounted, all optical control devices, modulators and deflectors, have been trial constructed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 170-172 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 28 |
| Issue number | S2 |
| DOIs | |
| State | Published - Jan 1 1989 |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy