Abstract
An all-organic active matrix emissive pixels is fabricated in which an organic light emitting diode (OLED) is integrated into the channel region of an organic thin film transistor (TFT). Charge carriers enter the organic emissive layer directly from the TFT channel, eliminating the need for TFT drain and OLED anode contacts. Pixels were completed by depositing aluminum through a mechanically aligned shadow mask to define semi-transparent cathodes with an area of 3.3×10-3 cm2. Such all-organic integrated active pixels offer a simplified device structure and reduce process complexity compared with more typical pixel designs. The lack of metallic anode contacts significantly reduce contact effects and increase the lifetime of the organic life emitters.
Original language | English (US) |
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Pages | 162-163 |
Number of pages | 2 |
State | Published - Dec 1 1999 |
Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999 |
Other
Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
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City | Santa Barbara, CA, USA |
Period | 6/28/99 → 6/30/99 |
All Science Journal Classification (ASJC) codes
- General Engineering