All-semiconductor negative-index plasmonic absorbers

S. Law; C. Roberts; T. Kilpatrick; L. Yu; T. Ribaudo; E. A. Shaner; V. Podolskiy; D. Wasserman

doi:10.1103/PhysRevLett.112.017401

All-semiconductor negative-index plasmonic absorbers

S. Law, C. Roberts, T. Kilpatrick, L. Yu, T. Ribaudo, E. A. Shaner, V. Podolskiy, D. Wasserman

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52 Scopus citations

Abstract

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.

Original language	English (US)
Article number	017401
Journal	Physical review letters
Volume	112
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.112.017401
State	Published - Jan 6 2014

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.112.017401

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@article{5bfdba92cc9c4f6dbbe326cd75fe57fc,

title = "All-semiconductor negative-index plasmonic absorbers",

abstract = "We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.",

author = "S. Law and C. Roberts and T. Kilpatrick and L. Yu and T. Ribaudo and Shaner, {E. A.} and V. Podolskiy and D. Wasserman",

year = "2014",

month = jan,

day = "6",

doi = "10.1103/PhysRevLett.112.017401",

language = "English (US)",

volume = "112",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - All-semiconductor negative-index plasmonic absorbers

AU - Law, S.

AU - Roberts, C.

AU - Kilpatrick, T.

AU - Yu, L.

AU - Ribaudo, T.

AU - Shaner, E. A.

AU - Podolskiy, V.

AU - Wasserman, D.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.

AB - We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.

UR - http://www.scopus.com/inward/record.url?scp=84892401339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892401339&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.112.017401

DO - 10.1103/PhysRevLett.112.017401

M3 - Article

AN - SCOPUS:84892401339

SN - 0031-9007

VL - 112

JO - Physical review letters

JF - Physical review letters

IS - 1

M1 - 017401

ER -

All-semiconductor negative-index plasmonic absorbers

Abstract

All Science Journal Classification (ASJC) codes

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