Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

Jie Liu; Yugang Zhou; Rongming Chu; Yong Cai; Kevin J. Chen; Kei May Lau

Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J. Chen, Kei May Lau

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

We report an Al_0.3Ga_0.7N/Al_0.05Ga _0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

Original language	English (US)
Pages (from-to)	811-814
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: Dec 13 2004 → Dec 15 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

@article{4570bae6181d489b975b45edcda2b836,

title = "Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity",

abstract = "We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.",

author = "Jie Liu and Yugang Zhou and Rongming Chu and Yong Cai and Chen, {Kevin J.} and Lau, {Kei May}",

note = "Funding Information: This work is supported by the grant ITS176/01B from the Innovation and Technology Commission of Hong Kong Government.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English (US)",

pages = "811--814",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

AU - Liu, Jie

AU - Zhou, Yugang

AU - Chu, Rongming

AU - Cai, Yong

AU - Chen, Kevin J.

AU - Lau, Kei May

N1 - Funding Information: This work is supported by the grant ITS176/01B from the Innovation and Technology Commission of Hong Kong Government.

PY - 2004

Y1 - 2004

N2 - We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

AB - We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

UR - http://www.scopus.com/inward/record.url?scp=21644461729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644461729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644461729

SN - 0163-1918

SP - 811

EP - 814

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN composite-channel HEMTs with enhanced linearity

Abstract

All Science Journal Classification (ASJC) codes

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