Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J. Chen, Kei May Lau

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations


We report an Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.

Original languageEnglish (US)
Pages (from-to)811-814
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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