TY - JOUR
T1 - Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers
AU - Liu, Jie
AU - Jiang, Zhenyu
AU - You, Guanjun
AU - Pei, Zengzhi
AU - Mo, Chen
AU - Chang, Min
AU - Liu, Bangzhi
AU - Xu, Jian
N1 - Funding Information:
This work was supported in part by the Nation Science Foundation under Grant ECCS0846018 and Grant ECCS0824186.
Funding Information:
Manuscript received March 20, 2019; revised June 10, 2019; accepted July 10, 2019. Date of publication August 8, 2019; date of current version August 21, 2019. This work was supported in part by the Nation Science Foundation under Grant ECCS0846018 and Grant ECCS0824186. The review of this paper was arranged by Editor C. Surya. (Corresponding author: Jian Xu.) The authors are with the Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802 USA (e-mail: jianxu@psu.edu).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.
AB - We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.
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U2 - 10.1109/TED.2019.2930467
DO - 10.1109/TED.2019.2930467
M3 - Article
AN - SCOPUS:85071244454
SN - 0018-9383
VL - 66
SP - 3881
EP - 3886
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
M1 - 8792380
ER -