Alternating Current III-Nitride Light-Emitting Diodes With On-Chip Schottky Barrier Diode Rectifiers

Jie Liu, Zhenyu Jiang, Guanjun You, Zengzhi Pei, Chen Mo, Min Chang, Bangzhi Liu, Jian Xu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report in this paper the design and fabrication of single-chip alternating current-LEDs (AC-LEDs) by monolithically integrating, for the first time, high-breakdown Schottky barrier diodes (SBDs) and micro-LED arrays using III-nitride LED epi-wafers of standard specs for volume production. A technique of cyclic mixed-etching has been introduced to restore the surface of inductively coupled-plasma (ICP) etching processed gallium nitride to device quality for fabricating high-breakdown Schottky junctions. Proof-of-concept single-chip AC-LED devices and a prototype driver-free white AC-LED lamp were demonstrated, showing high-efficiency LED emission, high chip area utilization efficiency, low power loss of the on-chip SBD bridge rectifier, and good luminous efficacy of the prototype AC-LED lamp. This paper paves the way toward mass-producing reliable and low-cost driver-free AC-LED lamps for solid-state lighting with existing LED manufacturing infrastructures.

Original languageEnglish (US)
Article number8792380
Pages (from-to)3881-3886
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - Sep 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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