Alumina films on sapphire crystal show restricted epitaxial growth

Ann M. Kazakos; Sridhar Komarneni; Rustum Roy

doi:10.1016/0167-577X(90)90018-H

Alumina films on sapphire crystal show restricted epitaxial growth

Ann M. Kazakos, Sridhar Komarneni, Rustum Roy

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Solid-state epitaxial growth has been demonstrated by forming a thin film of an alumina sol on a single-crystal alumina and firing. Single-crystal and polycrystalline alumina were used here as substrates upon which boehmite sol was deposited by spin coating. The substrates were then dried and fired and characterized by powder X-ray diffraction and scanning electron microscopy. Films on sapphire single crystals showed highly oriented growth while the films on polycrystalline alumina substrates showed random orientation.

Original language	English (US)
Pages (from-to)	75-78
Number of pages	4
Journal	Materials Letters
Volume	10
Issue number	1-2
DOIs	https://doi.org/10.1016/0167-577X(90)90018-H
State	Published - Sep 1990

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0167-577X(90)90018-H

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title = "Alumina films on sapphire crystal show restricted epitaxial growth",

abstract = "Solid-state epitaxial growth has been demonstrated by forming a thin film of an alumina sol on a single-crystal alumina and firing. Single-crystal and polycrystalline alumina were used here as substrates upon which boehmite sol was deposited by spin coating. The substrates were then dried and fired and characterized by powder X-ray diffraction and scanning electron microscopy. Films on sapphire single crystals showed highly oriented growth while the films on polycrystalline alumina substrates showed random orientation.",

author = "Kazakos, {Ann M.} and Sridhar Komarneni and Rustum Roy",

note = "Funding Information: This researcwh ass upportedb y the United States Air Force Ofice of ScientificR esearchu nderg rant No. AFOSR-89-0446.",

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doi = "10.1016/0167-577X(90)90018-H",

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T1 - Alumina films on sapphire crystal show restricted epitaxial growth

AU - Kazakos, Ann M.

AU - Komarneni, Sridhar

AU - Roy, Rustum

N1 - Funding Information: This researcwh ass upportedb y the United States Air Force Ofice of ScientificR esearchu nderg rant No. AFOSR-89-0446.

PY - 1990/9

Y1 - 1990/9

N2 - Solid-state epitaxial growth has been demonstrated by forming a thin film of an alumina sol on a single-crystal alumina and firing. Single-crystal and polycrystalline alumina were used here as substrates upon which boehmite sol was deposited by spin coating. The substrates were then dried and fired and characterized by powder X-ray diffraction and scanning electron microscopy. Films on sapphire single crystals showed highly oriented growth while the films on polycrystalline alumina substrates showed random orientation.

AB - Solid-state epitaxial growth has been demonstrated by forming a thin film of an alumina sol on a single-crystal alumina and firing. Single-crystal and polycrystalline alumina were used here as substrates upon which boehmite sol was deposited by spin coating. The substrates were then dried and fired and characterized by powder X-ray diffraction and scanning electron microscopy. Films on sapphire single crystals showed highly oriented growth while the films on polycrystalline alumina substrates showed random orientation.

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EP - 78

JO - Materials Letters

JF - Materials Letters

IS - 1-2

ER -

Alumina films on sapphire crystal show restricted epitaxial growth

Abstract

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