Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires

Mel Hainey; Sarah M. Eichfeld; Haoting Shen; Joanne Yim; Marcie R. Black; Joan M. Redwing

doi:10.1007/s11664-014-3565-8

Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires

Mel Hainey, Sarah M. Eichfeld, Haoting Shen, Joanne Yim, Marcie R. Black, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The growth of silicon nanowires in the ‹110› direction is reported using a vapor–liquid–solid mechanism with aluminum as the catalyst and SiH₄ as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor–solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.

Original language	English (US)
Pages (from-to)	1332-1337
Number of pages	6
Journal	Journal of Electronic Materials
Volume	44
Issue number	5
DOIs	https://doi.org/10.1007/s11664-014-3565-8
State	Published - Mar 24 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires",

abstract = "The growth of silicon nanowires in the ‹110› direction is reported using a vapor–liquid–solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor–solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.",

author = "Mel Hainey and Eichfeld, {Sarah M.} and Haoting Shen and Joanne Yim and Black, {Marcie R.} and Redwing, {Joan M.}",

note = "Funding Information: This material is based on work supported by the U.S. Department of Energy under Grant Number DE-EE0005323 and the National Science Foundation under Grant Number PFI:AIR-TT 1414236. Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

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AU - Hainey, Mel

AU - Eichfeld, Sarah M.

AU - Shen, Haoting

AU - Yim, Joanne

AU - Black, Marcie R.

AU - Redwing, Joan M.

N1 - Funding Information: This material is based on work supported by the U.S. Department of Energy under Grant Number DE-EE0005323 and the National Science Foundation under Grant Number PFI:AIR-TT 1414236. Publisher Copyright: © 2014, The Minerals, Metals & Materials Society.

PY - 2015/3/24

Y1 - 2015/3/24

N2 - The growth of silicon nanowires in the ‹110› direction is reported using a vapor–liquid–solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor–solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.

AB - The growth of silicon nanowires in the ‹110› direction is reported using a vapor–liquid–solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of ‹110› versus ‹111› nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve ‹110› wire yield by suppressing vapor–solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, ‹110› growth was found to occur only at temperatures below the Al-Si eutectic temperature (577°C). At temperatures approximately equal to 577°C or higher, the preferential growth direction was observed to shift from ‹110› to ‹111›. The growth of ‹110› Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the ‹110› direction.

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Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires

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