Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

Adetayo V. Adedeji; Ayayi C. Ahyi; John R. Williams; Suzanne E. Mohney; James D. Scofield

doi:10.1016/j.sse.2010.03.010

Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

Adetayo V. Adedeji, Ayayi C. Ahyi, John R. Williams, Suzanne E. Mohney, James D. Scofield

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO₂ were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

Original language	English (US)
Pages (from-to)	736-740
Number of pages	5
Journal	Solid-State Electronics
Volume	54
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2010.03.010
State	Published - Jul 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2010.03.010

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title = "Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c",

abstract = "A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.",

author = "Adedeji, {Adetayo V.} and Ahyi, {Ayayi C.} and Williams, {John R.} and Mohney, {Suzanne E.} and Scofield, {James D.}",

note = "Funding Information: This work was supported by the US Air Force Contract No. F33615-01-C-2188 at Auburn University. ",

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language = "English (US)",

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journal = "Solid-State Electronics",

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T1 - Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

AU - Adedeji, Adetayo V.

AU - Ahyi, Ayayi C.

AU - Williams, John R.

AU - Mohney, Suzanne E.

AU - Scofield, James D.

N1 - Funding Information: This work was supported by the US Air Force Contract No. F33615-01-C-2188 at Auburn University.

PY - 2010/7

Y1 - 2010/7

N2 - A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

AB - A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 °C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SiC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 °C as part of the metallization stack improved the adhesion properties of the metallization remarkably.

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JO - Solid-State Electronics

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ER -

Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c

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