Ambipolar ferromagnetism by electrostatic doping of a manganite

L. M. Zheng, X. Renshaw Wang, W. M. Lü, C. J. Li, T. R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, Kun Han, Z. H. Chen, X. P. Qiu, M. S. Li, Shize Yang, B. Yang, Matthew F. Chisholm, L. W. Martin, S. J. Pennycook, E. Y. Tsymbal, J. M.D. Coey, W. W. Cao

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

Original languageEnglish (US)
Article number1897
JournalNature communications
Issue number1
StatePublished - Dec 1 2018

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology
  • General Physics and Astronomy


Dive into the research topics of 'Ambipolar ferromagnetism by electrostatic doping of a manganite'. Together they form a unique fingerprint.

Cite this