An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes

Mingyo Park; Jialin Wang; Azadeh Ansari

An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes

Mingyo Park, Jialin Wang, Azadeh Ansari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents an 18 GHz thin-film bulk acoustic wave resonator (FBAR) based on epitaxial Aluminum Scandium Nitride (Al_1-xSc_xN), and epitaxial metal electrodes, optimized for simultaneously achieving high electromechanical coupling coefficient (k_t²) and high conductor quality factor (Q). Here, we utilize 40 nm-thick epi-metal electrodes to obtain the highest {k_t² achievable for 120 nm-thick Al_0.8Sc_0.2N piezo films. Our 40 nm-thick epi-Molybdenum (Mo) exhibits sheet resistance (R_sh) 25 times smaller than sputtered-Mo films of similar thickness, thus increasing the conductor Q by 25×. We report on the first demonstration of an 18 GHz all-epi Mo/AlScN/Al FBAR, with a Q_Bode of 110 and k_t² of 6%.

Original language	English (US)
Title of host publication	2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1805-1808
Number of pages	4
ISBN (Electronic)	9784886864352
State	Published - 2023
Event	22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 - Kyoto, Japan Duration: Jun 25 2023 → Jun 29 2023

Publication series

Name	2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023

Conference

Conference	22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023
Country/Territory	Japan
City	Kyoto
Period	6/25/23 → 6/29/23

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering
Control and Optimization
Instrumentation

Cite this

Park, M., Wang, J., & Ansari, A. (2023). An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes. In 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 (pp. 1805-1808). (2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023). Institute of Electrical and Electronics Engineers Inc..

Park, Mingyo ; Wang, Jialin ; Ansari, Azadeh. / An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes. 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 1805-1808 (2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023).

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title = "An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes",

abstract = "This work presents an 18 GHz thin-film bulk acoustic wave resonator (FBAR) based on epitaxial Aluminum Scandium Nitride (Al1-xScxN), and epitaxial metal electrodes, optimized for simultaneously achieving high electromechanical coupling coefficient (kt2) and high conductor quality factor (Q). Here, we utilize 40 nm-thick epi-metal electrodes to obtain the highest {kt2 achievable for 120 nm-thick Al0.8Sc0.2N piezo films. Our 40 nm-thick epi-Molybdenum (Mo) exhibits sheet resistance (Rsh) 25 times smaller than sputtered-Mo films of similar thickness, thus increasing the conductor Q by 25×. We report on the first demonstration of an 18 GHz all-epi Mo/AlScN/Al FBAR, with a QBode of 110 and kt2 of 6%.",

author = "Mingyo Park and Jialin Wang and Azadeh Ansari",

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series = "2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023",

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Park, M, Wang, J & Ansari, A 2023, An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes. in 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023. 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023, Institute of Electrical and Electronics Engineers Inc., pp. 1805-1808, 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023, Kyoto, Japan, 6/25/23.

An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes. / Park, Mingyo; Wang, Jialin; Ansari, Azadeh.
2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 1805-1808 (2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes

AU - Park, Mingyo

AU - Wang, Jialin

AU - Ansari, Azadeh

PY - 2023

Y1 - 2023

N2 - This work presents an 18 GHz thin-film bulk acoustic wave resonator (FBAR) based on epitaxial Aluminum Scandium Nitride (Al1-xScxN), and epitaxial metal electrodes, optimized for simultaneously achieving high electromechanical coupling coefficient (kt2) and high conductor quality factor (Q). Here, we utilize 40 nm-thick epi-metal electrodes to obtain the highest {kt2 achievable for 120 nm-thick Al0.8Sc0.2N piezo films. Our 40 nm-thick epi-Molybdenum (Mo) exhibits sheet resistance (Rsh) 25 times smaller than sputtered-Mo films of similar thickness, thus increasing the conductor Q by 25×. We report on the first demonstration of an 18 GHz all-epi Mo/AlScN/Al FBAR, with a QBode of 110 and kt2 of 6%.

AB - This work presents an 18 GHz thin-film bulk acoustic wave resonator (FBAR) based on epitaxial Aluminum Scandium Nitride (Al1-xScxN), and epitaxial metal electrodes, optimized for simultaneously achieving high electromechanical coupling coefficient (kt2) and high conductor quality factor (Q). Here, we utilize 40 nm-thick epi-metal electrodes to obtain the highest {kt2 achievable for 120 nm-thick Al0.8Sc0.2N piezo films. Our 40 nm-thick epi-Molybdenum (Mo) exhibits sheet resistance (Rsh) 25 times smaller than sputtered-Mo films of similar thickness, thus increasing the conductor Q by 25×. We report on the first demonstration of an 18 GHz all-epi Mo/AlScN/Al FBAR, with a QBode of 110 and kt2 of 6%.

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M3 - Conference contribution

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T3 - 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023

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BT - 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023

Y2 - 25 June 2023 through 29 June 2023

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Park M, Wang J, Ansari A. An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes. In 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 1805-1808. (2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023).

An 18GHz Alscn Film Bulk Acoustic Wave Resonator with Epitaxial Metal Electrodes

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All Science Journal Classification (ASJC) codes

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