An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks

A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C. Y. Kang, B. H. Lee, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

32 Scopus citations

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