Abstract
A novel voltage-controlled negative resistance circuit incorporating n-p-n current mirrors is presented. Fully compatible with silicon IC technology, the circuit provides linear negative resistance characteristics that can be set precisely with external resistors. Experimental results are presented for the basic circuit as well as some of its variants.
Original language | English (US) |
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Pages (from-to) | 311-313 |
Number of pages | 3 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 12 |
Issue number | 3 |
DOIs | |
State | Published - Jun 1977 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering