TY - JOUR
T1 - An application of multigrid methods for a discrete elastic model for epitaxial systems
AU - Caflisch, R. E.
AU - Lee, Y. J.
AU - Shu, S.
AU - Xiao, Y. X.
AU - Xu, J.
N1 - Funding Information:
The authors are thankful to the anonymous referees whose remarks led us to improve the presentations of the results in this paper. Research of R.E. Caflisch and Y.-J. Lee was supported in part by the MARCO Center on Functional Engineered NanoArchitectonics (FENA) and by the NSF through Grant DMS-0402276. S. Shu and Y.-X. Xiao’s research was supported in part by the NSAF-10376031 of China, the Basic Research Program of China under the Grant 2005CB321702. J. Xu’s research was supported by NSF through DMS-0209497 and NSF DMS-0215392 and the Furong Scholar Program of Hunan Province through Xiangtan University.
PY - 2006/12/10
Y1 - 2006/12/10
N2 - We apply an efficient and fast algorithm to simulate the atomistic strain model for epitaxial systems, recently introduced by Schindler et al. [Phys. Rev. B 67, 075316 (2003)]. The discrete effects in this lattice statics model are crucial for proper simulation of the influence of strain for thin film epitaxial growth, but the size of the atomistic systems of interest is in general quite large and hence the solution of the discrete elastic equations is a considerable numerical challenge. In this paper, we construct an algebraic multigrid method suitable for efficient solution of the large scale discrete strain model. Using this method, simulations are performed for several representative physical problems, including an infinite periodic step train, a layered nanocrystal, and a system of quantum dots. The results demonstrate the effectiveness and robustness of the method and show that the method attains optimal convergence properties, regardless of the problem size, the geometry and the physical parameters. The effects of substrate depth and of invariance due to traction-free boundary conditions are assessed. For a system of quantum dots, the simulated strain energy density supports the observations that trench formation near the dots provides strain relief.
AB - We apply an efficient and fast algorithm to simulate the atomistic strain model for epitaxial systems, recently introduced by Schindler et al. [Phys. Rev. B 67, 075316 (2003)]. The discrete effects in this lattice statics model are crucial for proper simulation of the influence of strain for thin film epitaxial growth, but the size of the atomistic systems of interest is in general quite large and hence the solution of the discrete elastic equations is a considerable numerical challenge. In this paper, we construct an algebraic multigrid method suitable for efficient solution of the large scale discrete strain model. Using this method, simulations are performed for several representative physical problems, including an infinite periodic step train, a layered nanocrystal, and a system of quantum dots. The results demonstrate the effectiveness and robustness of the method and show that the method attains optimal convergence properties, regardless of the problem size, the geometry and the physical parameters. The effects of substrate depth and of invariance due to traction-free boundary conditions are assessed. For a system of quantum dots, the simulated strain energy density supports the observations that trench formation near the dots provides strain relief.
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U2 - 10.1016/j.jcp.2006.04.007
DO - 10.1016/j.jcp.2006.04.007
M3 - Article
AN - SCOPUS:33750626824
SN - 0021-9991
VL - 219
SP - 697
EP - 714
JO - Journal of Computational Physics
JF - Journal of Computational Physics
IS - 2
ER -