An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson; M. A. Tischler; T. N. Jackson; M. A. Tischler; K. D. Wise

doi:10.1109/EDL.1981.25334

An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson, M. A. Tischler, T. N. Jackson, M. A. Tischler, K. D. Wise

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Abstract

An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

Original language	English (US)
Pages (from-to)	44-45
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	EDL-2
Issue number	2
DOIs	https://doi.org/10.1109/EDL.1981.25334
State	Published - Feb 1981

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1981.25334

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title = "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures",

abstract = "An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 {\AA}/minute, a factor of over 3000 times less than for unpassivated silicon.",

author = "Jackson, {T. N.} and Tischler, {M. A.} and Jackson, {T. N.} and Tischler, {M. A.} and Wise, {K. D.}",

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AU - Wise, K. D.

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AB - An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

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An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

Abstract

All Science Journal Classification (ASJC) codes

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