An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson; M. A. Tischler; T. N. Jackson; M. A. Tischler; K. D. Wise

doi:10.1109/EDL.1981.25334

An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

T. N. Jackson
, M. A. Tischler
, T. N. Jackson
, M. A. Tischler
, K. D. Wise

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

Original language	English (US)
Pages (from-to)	44-45
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	EDL-2
Issue number	2
DOIs	https://doi.org/10.1109/EDL.1981.25334
State	Published - Feb 1981

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDL.1981.25334

Cite this

@article{b831e2276bfb4b89a980c405fd8757c9,

title = "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures",

abstract = "An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 {\AA}/minute, a factor of over 3000 times less than for unpassivated silicon.",

author = "Jackson, \{T. N.\} and Tischler, \{M. A.\} and Jackson, \{T. N.\} and Tischler, \{M. A.\} and Wise, \{K. D.\}",

year = "1981",

month = feb,

doi = "10.1109/EDL.1981.25334",

language = "English (US)",

volume = "EDL-2",

pages = "44--45",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

AU - Jackson, T. N.

AU - Tischler, M. A.

AU - Jackson, T. N.

AU - Tischler, M. A.

AU - Wise, K. D.

PY - 1981/2

Y1 - 1981/2

N2 - An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

AB - An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.

UR - https://www.scopus.com/pages/publications/0002345301

UR - https://www.scopus.com/pages/publications/0002345301#tab=citedBy

U2 - 10.1109/EDL.1981.25334

DO - 10.1109/EDL.1981.25334

M3 - Article

AN - SCOPUS:0002345301

SN - 0741-3106

VL - EDL-2

SP - 44

EP - 45

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this