An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

P. M. Lenahan; P. V. Dressendorfer

doi:10.1063/1.332171

An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO₂ interface

P. M. Lenahan
, P. V. Dressendorfer

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

138 Scopus citations

Abstract

We have compared the generation of radiation-induced P_b ("trivalent silicon") centers at the Si/SiO₂ interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of P_b centers and radiation-induced interface state density (D_it) and similar annealing behavior of radiation-induced P_b and D_it. Furthermore, the P _b resonance intensity is strongly bias dependent; this indicates that the charge state of the P_b defect is bias dependent. We conclude that P_b defects account for a very large portion of radiation-induced interface states.

Original language	English (US)
Pages (from-to)	1457-1460
Number of pages	4
Journal	Journal of Applied Physics
Volume	54
Issue number	3
DOIs	https://doi.org/10.1063/1.332171
State	Published - 1983

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.332171

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title = "An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface",

abstract = "We have compared the generation of radiation-induced Pb ({"}trivalent silicon{"}) centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.",

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year = "1983",

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T1 - An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

AU - Lenahan, P. M.

AU - Dressendorfer, P. V.

PY - 1983

Y1 - 1983

N2 - We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.

AB - We have compared the generation of radiation-induced Pb ("trivalent silicon") centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the P b resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.

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UR - https://www.scopus.com/pages/publications/0020718887#tab=citedBy

U2 - 10.1063/1.332171

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JF - Journal of Applied Physics

IS - 3

ER -

An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO₂ interface

Abstract

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