An experimental demonstration of GaN CMOS technology

Rongming Chu, Yu Cao, Mary Chen, Ray Li, Daniel Zehnder

Research output: Contribution to journalArticlepeer-review

118 Scopus citations


This letter reports the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor technology. Selective area epitaxy was employed to have both GaN N-channel MOSFET (NMOS) and P-channel MOSFET (PMOS) structures on the same wafer. An AlN/SiN dielectric stack grown by metal-organic chemical vapor deposition served as the gate oxide for both NMOS and PMOS, yielding enhancement-mode N- and P-channel with the electron mobility of 300 cm2/V-s and hole mobility of 20 cm2/V-s, respectively. Using the GaN CMOS technology, a functional inverter integrated circuit was fabricated and characterized.

Original languageEnglish (US)
Article number2515103
Pages (from-to)269-271
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - Mar 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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