An experimental investigation on high voltage GaAs photoconductive semiconductor switch

Chia En Yang; Jimmy Yao; Yun Ching Chang; Shizhuo Yin

doi:10.1117/12.862144

An experimental investigation on high voltage GaAs photoconductive semiconductor switch

Chia En Yang, Jimmy Yao, Yun Ching Chang, Shizhuo Yin

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.

Original language	English (US)
Title of host publication	Photonic Fiber and Crystal Devices
Subtitle of host publication	Advances in Materials and Innovations in Device Applications IV
DOIs	https://doi.org/10.1117/12.862144
State	Published - 2010
Event	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV - San Diego, CA, United States Duration: Aug 1 2010 → Aug 2 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7781
ISSN (Print)	0277-786X

Other

Other	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV
Country/Territory	United States
City	San Diego, CA
Period	8/1/10 → 8/2/10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.862144

Cite this

Yang, C. E., Yao, J., Chang, Y. C., & Yin, S. (2010). An experimental investigation on high voltage GaAs photoconductive semiconductor switch. In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV Article 778112 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7781). https://doi.org/10.1117/12.862144

@inproceedings{4dd293cd8db741f2ab08169173ebe96b,

title = "An experimental investigation on high voltage GaAs photoconductive semiconductor switch",

abstract = "In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.",

author = "Yang, {Chia En} and Jimmy Yao and Chang, {Yun Ching} and Shizhuo Yin",

year = "2010",

doi = "10.1117/12.862144",

language = "English (US)",

isbn = "9780819482778",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Photonic Fiber and Crystal Devices",

note = "Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV ; Conference date: 01-08-2010 Through 02-08-2010",

}

Yang, CE, Yao, J, Chang, YC & Yin, S 2010, An experimental investigation on high voltage GaAs photoconductive semiconductor switch. in Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV., 778112, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, San Diego, CA, United States, 8/1/10. https://doi.org/10.1117/12.862144

An experimental investigation on high voltage GaAs photoconductive semiconductor switch. / Yang, Chia En; Yao, Jimmy; Chang, Yun Ching et al.
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV. 2010. 778112 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7781).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - An experimental investigation on high voltage GaAs photoconductive semiconductor switch

AU - Yang, Chia En

AU - Yao, Jimmy

AU - Chang, Yun Ching

AU - Yin, Shizhuo

PY - 2010

Y1 - 2010

N2 - In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.

AB - In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.

UR - http://www.scopus.com/inward/record.url?scp=77957837747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957837747&partnerID=8YFLogxK

U2 - 10.1117/12.862144

DO - 10.1117/12.862144

M3 - Conference contribution

AN - SCOPUS:77957837747

SN - 9780819482778

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Photonic Fiber and Crystal Devices

T2 - Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV

Y2 - 1 August 2010 through 2 August 2010

ER -

An experimental investigation on high voltage GaAs photoconductive semiconductor switch

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this