An experimental study of contact effects in organic thin film transistors

D. J. Gundlach; L. Zhou; J. A. Nichols; T. N. Jackson; P. V. Necliudov; M. S. Shur

doi:10.1063/1.2215132

An experimental study of contact effects in organic thin film transistors

D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, M. S. Shur

Research output: Contribution to journal › Article › peer-review

432 Scopus citations

Abstract

We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 μm.

Original language	English (US)
Article number	024509
Journal	Journal of Applied Physics
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.2215132
State	Published - 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.2215132

Cite this

@article{9a222d6f490d496a8e9874ed53421864,

title = "An experimental study of contact effects in organic thin film transistors",

abstract = "We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 μm.",

author = "Gundlach, {D. J.} and L. Zhou and Nichols, {J. A.} and Jackson, {T. N.} and Necliudov, {P. V.} and Shur, {M. S.}",

note = "Funding Information: Financial support at the time of this study was provided by the Defense Advanced Research Program Agency and the Naval Surface Warfare Center, Dalgren Division, and is gratefully acknowledged. The authors wish to thank D. Oberhoff and K. P. Pernstich, ETH Z{\"u}rich, Laboratory for Solid State Physics, Z{\"u}rich, Switzerland for useful discussions during the preparation of this manuscript. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2215132",

language = "English (US)",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - An experimental study of contact effects in organic thin film transistors

AU - Gundlach, D. J.

AU - Zhou, L.

AU - Nichols, J. A.

AU - Jackson, T. N.

AU - Necliudov, P. V.

AU - Shur, M. S.

N1 - Funding Information: Financial support at the time of this study was provided by the Defense Advanced Research Program Agency and the Naval Surface Warfare Center, Dalgren Division, and is gratefully acknowledged. The authors wish to thank D. Oberhoff and K. P. Pernstich, ETH Zürich, Laboratory for Solid State Physics, Zürich, Switzerland for useful discussions during the preparation of this manuscript. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 μm.

AB - We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 μm.

UR - http://www.scopus.com/inward/record.url?scp=33746782894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746782894&partnerID=8YFLogxK

U2 - 10.1063/1.2215132

DO - 10.1063/1.2215132

M3 - Article

AN - SCOPUS:33746782894

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 024509

ER -

An experimental study of contact effects in organic thin film transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this