An experimental study of ion beam and ECR hydrogenation of self-ion implantation damage in silicon by admittance spectroscopy and X-ray triple crystal diffractometry

Oxidized silicon samples were implanted with the Si ions. Following implantation, room temperature hydrogenation was carried out with H⁺ species from the ECR (electron cyclotron resonance) or the Kaufman source. The samples were characterized by x-ray triple crystal diffractometry and MOS (metal-oxide-semiconductor) admittance spectroscopy to reveal information on the nature of the interaction between the Si-ion-induced damage and the ECR or the Kaufman gun hydrogen species. The experimental results on the strain profiles, the electron traps, the oxide leakage current, and the admittance characteristics indicated that, while ion beam hydrogenation was mostly successful in defect passivation, ECR hydrogenation introduced extensive further damage into the samples, leading to the deterioration of almost all the device characteristics.