An improved in-based ohmic contact to n-GaSb

J. A. Robinson; S. E. Mohney

doi:10.1016/j.sse.2004.02.022

An improved in-based ohmic contact to n-GaSb

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Abstract

A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10^-6 Ωcm². The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga _xIn_1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

Original language	English (US)
Pages (from-to)	1667-1672
Number of pages	6
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2004.02.022
State	Published - Sep 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2004.02.022

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title = "An improved in-based ohmic contact to n-GaSb",

abstract = "A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.",

author = "Robinson, \{J. A.\} and Mohney, \{S. E.\}",

note = "Funding Information: The authors would like to thank Mr. Sammy Wang for his assistance in the AFM work. The authors also wish to acknowledge the support of DARPA through ONR grant N0014-01-1-0790 monitored by J. Shah (DARPA) and C. Wood (ONR), and NDSEG for the financial support of J.A. Robinson. ",

year = "2004",

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doi = "10.1016/j.sse.2004.02.022",

language = "English (US)",

volume = "48",

pages = "1667--1672",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - An improved in-based ohmic contact to n-GaSb

AU - Robinson, J. A.

AU - Mohney, S. E.

N1 - Funding Information: The authors would like to thank Mr. Sammy Wang for his assistance in the AFM work. The authors also wish to acknowledge the support of DARPA through ONR grant N0014-01-1-0790 monitored by J. Shah (DARPA) and C. Wood (ONR), and NDSEG for the financial support of J.A. Robinson.

PY - 2004/9

Y1 - 2004/9

N2 - A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

AB - A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4×10-6 Ωcm2. The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that Ga xIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior.

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UR - https://www.scopus.com/pages/publications/2942674767#tab=citedBy

U2 - 10.1016/j.sse.2004.02.022

DO - 10.1016/j.sse.2004.02.022

M3 - Article

AN - SCOPUS:2942674767

SN - 0038-1101

VL - 48

SP - 1667

EP - 1672

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

An improved in-based ohmic contact to n-GaSb

Abstract

All Science Journal Classification (ASJC) codes

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