An InGaAs/InP photodiode with 600mW RF output power

Ning Duan, Ning Li, Stephane Demiguel, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


We report an InGaAs/InP charge compensated uni-traveling-carrier photodiode with thick depletion region with RF output power of 600mW at 2GHz.

Original languageEnglish (US)
Title of host publication2006 Digest of the LEOS Summer Topical Meetings
Number of pages2
StatePublished - 2006
Event2006 LEOS Summer Topical Meetings - Quebec City, QC, Canada
Duration: Jul 17 2006Jul 19 2006

Publication series

NameLEOS Summer Topical Meeting
ISSN (Print)1099-4742


Conference2006 LEOS Summer Topical Meetings
CityQuebec City, QC

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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