An InGaAs/InP photodiode with 600mW RF output power

Ning Duan, Ning Li, Stephane Demiguel, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We report an InGaAs/InP charge compensated uni-traveling-carrier photodiode with thick depletion region with RF output power of 600mW at 2GHz.

Original languageEnglish (US)
Title of host publication2006 Digest of the LEOS Summer Topical Meetings
Pages52-53
Number of pages2
StatePublished - 2006
Event2006 LEOS Summer Topical Meetings - Quebec City, QC, Canada
Duration: Jul 17 2006Jul 19 2006

Publication series

NameLEOS Summer Topical Meeting
ISSN (Print)1099-4742

Conference

Conference2006 LEOS Summer Topical Meetings
Country/TerritoryCanada
CityQuebec City, QC
Period7/17/067/19/06

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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