TY - JOUR
T1 - An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by RF-plasma assisted molecular beam epitaxy
AU - Ptak, A. J.
AU - Stoica, V. A.
AU - Holbert, L. J.
AU - Moldovan, M.
AU - Myers, T. H.
PY - 2000
Y1 - 2000
N2 - Photoconductance decay and spectral photoconductance measurements were made on a set of ten undoped layers of GaN grown by rf-plasma MBE. The layers, also characterized by Hall, photoluminescence and reflectance measurements, represented a wide variety in electrical and optical properties, and several were grown under atomic hydrogen. Spectral photoconductance indicated transitions at 1.0-1.1, 1.92, 2.15, 3.08 and 3.2-3.4 eV. All layers exhibited persistent photoconductivity to some degree. In contrast with previous reports, a clear correlation was not observed between persistent photoconductivity and yellow luminescence or, indeed, with any measurement made. Analysis of photoconductance decay indicates that more than one type of persistent photoconductivity may be present.
AB - Photoconductance decay and spectral photoconductance measurements were made on a set of ten undoped layers of GaN grown by rf-plasma MBE. The layers, also characterized by Hall, photoluminescence and reflectance measurements, represented a wide variety in electrical and optical properties, and several were grown under atomic hydrogen. Spectral photoconductance indicated transitions at 1.0-1.1, 1.92, 2.15, 3.08 and 3.2-3.4 eV. All layers exhibited persistent photoconductivity to some degree. In contrast with previous reports, a clear correlation was not observed between persistent photoconductivity and yellow luminescence or, indeed, with any measurement made. Analysis of photoconductance decay indicates that more than one type of persistent photoconductivity may be present.
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U2 - 10.1557/s1092578300005007
DO - 10.1557/s1092578300005007
M3 - Article
AN - SCOPUS:3242744451
SN - 1092-5783
VL - 5
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
IS - SUPPL. 1
ER -