An optical method for evaluation of the net acceptor concentration in p-type ZnSe

B. Hu, A. Yin, G. Karczewski, H. Luo, S. W. Short, N. Samarth, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report photoluminescence (PL) results obtained on p-type ZnSe epilayers grown by molecular beam epitaxy. As an acceptor dopant, we used an active nitrogen beam produced by a free radical nitrogen source. On the basis of a detailed analysis of PL data we propose a simple semiquantitative method for a quick and contactless evaluation of the net acceptor concentration in p-type ZnSe. In particular, we show that the intensity ratio of the donor-acceptor pair (DAP) emission to the acceptor-bound exciton (I1) emission strongly depends on both the excitation power and the quality of the sample, and because of that it cannot by itself be regarded as a good measure of the net acceptor concentration. On the other hand, the intensity of the DAP emission under saturation excitation shows a simple direct proportionality to the net acceptor concentration, thus providing a reliable tool for determining the relative doping level in p-type ZnSe films.

Original languageEnglish (US)
Pages (from-to)4153-4157
Number of pages5
JournalJournal of Applied Physics
Volume74
Issue number6
DOIs
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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