Abstract
An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al 0.40Ga0.60N-Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.
Original language | English (US) |
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Pages (from-to) | 1 |
Number of pages | 1 |
Journal | Applied Physics Letters |
State | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)