Abstract
Using high resolution transmission electron miscroscopy, a thin pseudomorphic AlN layer (2-3 nm) has been observed at the metal/GaN interfaces of Ti/Al (35/115 nm) and Pd/Al (25/125 nm) ohmic contacts to n-type GaN annealed in Ar at 600°C for 15 and 30 s, respectively. The interfacial layer has a c-plane (002) lattice spacing of 2.48±.03 Å and an a-plane (100) spacing matching that of GaN (2.76 Å), and the identification of this layer as AlN is consistent with chemical analysis by energy dispersive x-ray spectroscopy. The formation of this interfacial AlN layer coincides with the onset of ohmic behavior in Ti/Al and Pd/Al contacts annealed at 600°C and may be the cause.
Original language | English (US) |
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Pages (from-to) | 3859-3861 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 26 |
DOIs | |
State | Published - Dec 29 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)