Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Weihua Guan; Shibing Long; Rui Jia; Qi Liu; Yuan Hu; Qin Wang; Ming Liu

doi:10.1109/EDSSC.2007.4450082

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Weihua Guan, Shibing Long, Rui Jia, Qi Liu, Yuan Hu, Qin Wang, Ming Liu

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

Original language	English (US)
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	141-144
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450082
State	Published - Dec 1 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, Province of China Duration: Dec 20 2007 → Dec 22 2007

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan, Province of China
City	Tainan
Period	12/20/07 → 12/22/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450082

Cite this

Guan, W., Long, S., Jia, R., Liu, Q., Hu, Y., Wang, Q., & Liu, M. (2007). Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 141-144). Article 4450082 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450082

@inproceedings{695f57cdd835421a999447dc0be92346,

title = "Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories",

abstract = "A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.",

author = "Weihua Guan and Shibing Long and Rui Jia and Qi Liu and Yuan Hu and Qin Wang and Ming Liu",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450082",

language = "English (US)",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "141--144",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Guan, W, Long, S, Jia, R, Liu, Q, Hu, Y, Wang, Q & Liu, M 2007, Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450082, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 141-144, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, Province of China, 12/20/07. https://doi.org/10.1109/EDSSC.2007.4450082

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. / Guan, Weihua; Long, Shibing; Jia, Rui et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 141-144 4450082 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

AU - Guan, Weihua

AU - Long, Shibing

AU - Jia, Rui

AU - Liu, Qi

AU - Hu, Yuan

AU - Wang, Qin

AU - Liu, Ming

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

AB - A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-Κ dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

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DO - 10.1109/EDSSC.2007.4450082

M3 - Conference contribution

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SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 141

EP - 144

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Guan W, Long S, Jia R, Liu Q, Hu Y, Wang Q et al. Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 141-144. 4450082. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450082

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

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