Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques

Keyphrases

• Barrier Height 100%
• 4H-SiC 100%
• SiC SBD 100%
• SiC Schottky Diode 100%
• Threshold Accepting 100%
• High Performance 50%
• High Temperature 50%
• High-frequency Applications 50%
• Ideality Factor 50%
• Current-voltage Characteristics 50%
• Current-voltage 50%
• Schottky Diode 50%
• Fitting Algorithm 50%
• Non-homogeneity 50%
• Parameter Dependence 50%
• Conventional Analysis 50%
• Non-ideality 50%
• Temperature Property 50%
• Speed-power 50%
• High Electron Mobility 50%
• SiC Polytypes 50%
• High-speed Switching 50%
• Diode Parameters 50%
• Height Analysis 50%
• Diode Behavior 50%
• Power Electronics 50%
• Low Power Loss 50%

Material Science

• Schottky Diode 100%
• Simulated Annealing 100%
• Schottky Barrier 50%
• Current Voltage Characteristics 50%
• Electron Mobility 50%