Analysis of frequency-dependent lossy transmission lines driven by CMOS gates

Xiaochun Li; Junfa Mao; Madhavan Swaminathan

doi:10.1109/EDAPS.2009.5403982

Analysis of frequency-dependent lossy transmission lines driven by CMOS gates

Xiaochun Li, Junfa Mao, Madhavan Swaminathan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers' velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.

Original language	English (US)
Title of host publication	2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009
DOIs	https://doi.org/10.1109/EDAPS.2009.5403982
State	Published - 2009
Event	2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009 - Shatin, Hong Kong, China Duration: Dec 2 2009 → Dec 4 2009

Publication series

Name	2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009

Conference

Conference	2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009
Country/Territory	China
City	Shatin, Hong Kong
Period	12/2/09 → 12/4/09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDAPS.2009.5403982

Cite this

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title = "Analysis of frequency-dependent lossy transmission lines driven by CMOS gates",

abstract = "This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers' velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.",

author = "Xiaochun Li and Junfa Mao and Madhavan Swaminathan",

year = "2009",

doi = "10.1109/EDAPS.2009.5403982",

language = "English (US)",

isbn = "9781424453504",

series = "2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009",

booktitle = "2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009",

note = "2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009 ; Conference date: 02-12-2009 Through 04-12-2009",

}

Li, X, Mao, J & Swaminathan, M 2009, Analysis of frequency-dependent lossy transmission lines driven by CMOS gates. in 2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009., 5403982, 2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, 2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009, Shatin, Hong Kong, China, 12/2/09. https://doi.org/10.1109/EDAPS.2009.5403982

Analysis of frequency-dependent lossy transmission lines driven by CMOS gates. / Li, Xiaochun; Mao, Junfa; Swaminathan, Madhavan.
2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009. 2009. 5403982 (2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Mao, Junfa

AU - Swaminathan, Madhavan

PY - 2009

Y1 - 2009

N2 - This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers' velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.

AB - This paper introduces an accurate FDTD-based method for analysis of time domain response of frequency-dependent lossy transmission lines driven by CMOS gates. MOS transistors are modeled as the nonlinear alpha-power law model that includes the carriers' velocity saturation effect of short-channel devices. The dynamic behavior of CMOS gates during switching is defined in seven operation regions. Skin effects of lossy transmission line are included in the proposed method and analyzed with FDTD. The proposed method is accurate by comparison between the numerical results of the proposed method and the simulation results of SPICE.

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M3 - Conference contribution

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T3 - 2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009

BT - 2009 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2009

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Y2 - 2 December 2009 through 4 December 2009

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Analysis of frequency-dependent lossy transmission lines driven by CMOS gates

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