Abstract
A phase-field model is developed to elucidate the process of polarization switching in BiFeO3 thin film. The results demonstrated an energy-favorable mechanism for domain switching path and revealed possible ferroelectric domain switching modes. It is shown that 71° switching is dominant among the three possible switching paths, namely 71°, 109° and 180° switching. This might provide significant references for the application of ferroelectric materials under electric fields.
Original language | English (US) |
---|---|
Pages (from-to) | 208-213 |
Number of pages | 6 |
Journal | Computational Materials Science |
Volume | 115 |
DOIs | |
State | Published - Apr 1 2016 |
All Science Journal Classification (ASJC) codes
- General Computer Science
- General Chemistry
- General Materials Science
- Mechanics of Materials
- General Physics and Astronomy
- Computational Mathematics