Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

N. J. Podraza; Jing Li; C. R. Wronski; E. C. Dickey; M. W. Horn; R. W. Collins

doi:10.1002/pssa.200777876

Analysis of Si _1-xGe _x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

N. J. Podraza, Jing Li, C. R. Wronski, E. C. Dickey, M. W. Horn, R. W. Collins

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Silicon-germanium (Si _1-xGe _x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH ₄ and GeH ₄ and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si _1-xGe _x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si _1-xGe _x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

Original language	English (US)
Pages (from-to)	892-895
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200777876
State	Published - Apr 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pssa.200777876

Cite this

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title = "Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry",

abstract = "Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.",

author = "Podraza, {N. J.} and Jing Li and Wronski, {C. R.} and Dickey, {E. C.} and Horn, {M. W.} and Collins, {R. W.}",

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T1 - Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

AU - Podraza, N. J.

AU - Li, Jing

AU - Wronski, C. R.

AU - Dickey, E. C.

AU - Horn, M. W.

AU - Collins, R. W.

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N2 - Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

AB - Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

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