Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

N. J. Podraza; Jing Li; C. R. Wronski; E. C. Dickey; M. W. Horn; R. W. Collins

doi:10.1002/pssa.200777876

Analysis of Si _1-xGe _x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

N. J. Podraza
, Jing Li
, C. R. Wronski
, E. C. Dickey
, M. W. Horn
, R. W. Collins

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Silicon-germanium (Si _1-xGe _x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH ₄ and GeH ₄ and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si _1-xGe _x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si _1-xGe _x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

Original language	English (US)
Pages (from-to)	892-895
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200777876
State	Published - Apr 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pssa.200777876

Cite this

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title = "Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry",

abstract = "Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.",

author = "Podraza, \{N. J.\} and Jing Li and Wronski, \{C. R.\} and Dickey, \{E. C.\} and Horn, \{M. W.\} and Collins, \{R. W.\}",

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T1 - Analysis of Si 1-xGe x:H thin films with graded composition and structure by real time spectroscopic ellipsometry

AU - Podraza, N. J.

AU - Li, Jing

AU - Wronski, C. R.

AU - Dickey, E. C.

AU - Horn, M. W.

AU - Collins, R. W.

PY - 2008/4

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AB - Silicon-germanium (Si 1-xGe x : H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH 4 and GeH 4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si 1-xGe x : H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy graded a-Si 1-xGe x : H has been studied as well using similar methods. Both types of films are of interest for Si-based photovoltaic devices.

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