Analysis of strain fields in silicon nanocrystals

Dündar E. Yilmaz, Ceyhun Bulutay, Tahir Çaǧin

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

Original languageEnglish (US)
Article number191914
JournalApplied Physics Letters
Issue number19
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Analysis of strain fields in silicon nanocrystals'. Together they form a unique fingerprint.

Cite this