Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Keyphrases

• AlGaN-GaN 100%
• Average Stress 20%
• Comparative Analysis 20%
• Conducting Channels 40%
• Crystal Defects 20%
• Depth Variation 20%
• Device Reliability 20%
• Diffraction 20%
• Elastic Energy 20%
• GaN HEMT 100%
• GaN Layers 40%
• Gate Electrode 20%
• Heterointerface 20%
• Micro-Raman Spectroscopy 20%
• Operating Conditions 20%
• Photoluminescence 40%
• Raman Measurements 20%
• Residual Stress 20%
• Residual Stress Distribution 100%
• Surface Interface 20%
• Tensile Strain 20%
• Vertical Gradient 20%
• Volume Averaging 20%

Engineering

• Comparative Analysis 50%
• Conductive 100%
• Defects 50%
• Elastic Energy 50%
• Piezoelectric 50%
• Ray Diffraction 50%
• Residual Stress 50%
• Residual Stress Distribution 100%
• Tensile Strain 50%
• Tensiles 50%

Material Science

• Crystallographic Defect 33%
• Electron Mobility 100%
• Micro-Raman Spectroscopy 33%
• Photoluminescence 100%
• Piezoelectricity 33%
• Residual Stress 100%
• Tensile Strain 33%
• Transistor 100%