Keyphrases
AlGaN-GaN
100%
Average Stress
20%
Comparative Analysis
20%
Conducting Channels
40%
Crystal Defects
20%
Depth Variation
20%
Device Reliability
20%
Diffraction
20%
Elastic Energy
20%
GaN HEMT
100%
GaN Layers
40%
Gate Electrode
20%
Heterointerface
20%
Micro-Raman Spectroscopy
20%
Operating Conditions
20%
Photoluminescence
40%
Raman Measurements
20%
Residual Stress
20%
Residual Stress Distribution
100%
Surface Interface
20%
Tensile Strain
20%
Vertical Gradient
20%
Volume Averaging
20%
Engineering
Comparative Analysis
50%
Conductive
100%
Defects
50%
Elastic Energy
50%
Piezoelectric
50%
Ray Diffraction
50%
Residual Stress
50%
Residual Stress Distribution
100%
Tensile Strain
50%
Tensiles
50%
Material Science
Crystallographic Defect
33%
Electron Mobility
100%
Micro-Raman Spectroscopy
33%
Photoluminescence
100%
Piezoelectricity
33%
Residual Stress
100%
Tensile Strain
33%
Transistor
100%