Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

Yoontae Hwang; Roman Engel-Herbert; Nicholas G. Rudawski; Susanne Stemmer

doi:10.1063/1.3360221

Analysis of trap state densities at HfO₂/In_0.53 Ga_0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, Susanne Stemmer

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

HfO₂ was deposited on n - and p -type In_0.53 Ga _0.47 As by chemical beam deposition. Interface trap densities (D _it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the D_it to rise above 1013 cm^-2 eV^-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the D_it close to the band edges is discussed.

Original language	English (US)
Article number	102910
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3360221
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3360221

Cite this

@article{b6985195a3ba47a9a948dd3eefbb976d,

title = "Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces",

abstract = "HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.",

author = "Yoontae Hwang and Roman Engel-Herbert and Rudawski, {Nicholas G.} and Susanne Stemmer",

note = "Funding Information: The authors gratefully acknowledge Jeff Huang of Sematech for performing the measurements as well as funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network. ",

year = "2010",

doi = "10.1063/1.3360221",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

AU - Hwang, Yoontae

AU - Engel-Herbert, Roman

AU - Rudawski, Nicholas G.

AU - Stemmer, Susanne

N1 - Funding Information: The authors gratefully acknowledge Jeff Huang of Sematech for performing the measurements as well as funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

PY - 2010

Y1 - 2010

N2 - HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

AB - HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

UR - http://www.scopus.com/inward/record.url?scp=77949690122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949690122&partnerID=8YFLogxK

U2 - 10.1063/1.3360221

DO - 10.1063/1.3360221

M3 - Article

AN - SCOPUS:77949690122

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102910

ER -

Analysis of trap state densities at HfO₂/In_0.53 Ga_0.47 As interfaces

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this