Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, Susanne Stemmer

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HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

Original languageEnglish (US)
Article number102910
JournalApplied Physics Letters
Issue number10
StatePublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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