TY - GEN
T1 - Analytic determination of conduction power losses in flying capacitor multicell power converter
AU - Dargahi, Vahid
AU - Khoshkbar-Sadigh, Arash
AU - Corzine, Keith
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/8
Y1 - 2015/5/8
N2 - Multilevel converters are mainly used in the medium-voltage high-power applications. Flying capacitor multicell (FCM) converter is one of the well-known categories of multilevel power converters. Since conduction power loss investigation can be very advantageous in the design step of multilevel converters, this paper presents an analytic approach in order to calculate and investigate the conduction power loss in FCM converters. First, the rms and average currents of the insulated gate bipolar transistors (IGBTs) and anti-parallel diodes are analytically calculated by considering the associated duty cycle of each IGBT and anti-parallel diode, power converter modulation index, load current, and load power factor. Numerical results of the obtained analytical equations to calculate the rms and average currents of the IGBTs/diodes are compared against the simulation results whereas matching well and confirming accuracy of the derived formula. Afterwards, the obtained equations for the rms and average currents computation are used to calculate conduction power losses in a 12.25MVA 3.3kV 9-level (line-to-line) FCM power converter. A 2.5kV 1.5kA IGBT module from ABB is considered as power switches for FCM converter in performed case study.
AB - Multilevel converters are mainly used in the medium-voltage high-power applications. Flying capacitor multicell (FCM) converter is one of the well-known categories of multilevel power converters. Since conduction power loss investigation can be very advantageous in the design step of multilevel converters, this paper presents an analytic approach in order to calculate and investigate the conduction power loss in FCM converters. First, the rms and average currents of the insulated gate bipolar transistors (IGBTs) and anti-parallel diodes are analytically calculated by considering the associated duty cycle of each IGBT and anti-parallel diode, power converter modulation index, load current, and load power factor. Numerical results of the obtained analytical equations to calculate the rms and average currents of the IGBTs/diodes are compared against the simulation results whereas matching well and confirming accuracy of the derived formula. Afterwards, the obtained equations for the rms and average currents computation are used to calculate conduction power losses in a 12.25MVA 3.3kV 9-level (line-to-line) FCM power converter. A 2.5kV 1.5kA IGBT module from ABB is considered as power switches for FCM converter in performed case study.
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U2 - 10.1109/APEC.2015.7104678
DO - 10.1109/APEC.2015.7104678
M3 - Conference contribution
AN - SCOPUS:84937910630
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2358
EP - 2364
BT - APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
Y2 - 15 March 2015 through 19 March 2015
ER -