TY - GEN
T1 - Analytical determination of conduction losses for modified flying capacitor multicell converters
AU - Dargahi, Vahid
AU - Sadigh, Arash Khoshkbar
AU - Corzine, Keith
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/5/10
Y1 - 2016/5/10
N2 - Multilevel converters are mostly applied for medium-voltage high-power applications. Flying-capacitor-based multilevel converters such as flying capacitor multicell (FCM) and modified FCM (MFCM) are promising breeds of multilevel converters. Considering the advantages of MFCM converter over conventional FCM converter, and noting that conduction power loss investigation can be very advantageous in the design phase of multilevel converters, this paper presents an analytical approach to calculate and analyze conduction power losses in MFCM converters. First, the rms and average currents of the insulated-gate bipolar transistors (IGBTs) and anti-parallel diodes are analytically calculated by considering the associated duty cycle of each IGBT/diode in terms of the converter modulation index, load current, and load power factor. Numerical results of the derived closed-form equations to calculate the rms and average currents of IGBTs/diodes are compared with simulation results. All the simulation and analytic results agree well with each other which validate the derived closed-form equations. Afterwards, the obtained equations for rms and average current computations are utilized to calculate the conduction power losses in a 12.4MVA 3.3kV 9-level (line-to-line) MFCM converter. A 2.5kV 1.5kA IGBT module from ABB is considered as the power switch in the performed study for MFCM converter.
AB - Multilevel converters are mostly applied for medium-voltage high-power applications. Flying-capacitor-based multilevel converters such as flying capacitor multicell (FCM) and modified FCM (MFCM) are promising breeds of multilevel converters. Considering the advantages of MFCM converter over conventional FCM converter, and noting that conduction power loss investigation can be very advantageous in the design phase of multilevel converters, this paper presents an analytical approach to calculate and analyze conduction power losses in MFCM converters. First, the rms and average currents of the insulated-gate bipolar transistors (IGBTs) and anti-parallel diodes are analytically calculated by considering the associated duty cycle of each IGBT/diode in terms of the converter modulation index, load current, and load power factor. Numerical results of the derived closed-form equations to calculate the rms and average currents of IGBTs/diodes are compared with simulation results. All the simulation and analytic results agree well with each other which validate the derived closed-form equations. Afterwards, the obtained equations for rms and average current computations are utilized to calculate the conduction power losses in a 12.4MVA 3.3kV 9-level (line-to-line) MFCM converter. A 2.5kV 1.5kA IGBT module from ABB is considered as the power switch in the performed study for MFCM converter.
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U2 - 10.1109/APEC.2016.7468267
DO - 10.1109/APEC.2016.7468267
M3 - Conference contribution
AN - SCOPUS:84973596316
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2840
EP - 2846
BT - 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016
Y2 - 20 March 2016 through 24 March 2016
ER -